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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/4
HSB1109S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.
Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 900 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ...................................................................................... -160 V VCEO Collector to Emitter Voltage ................................................................................... -160 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current ...................................................................................................... -100 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. -160 -160 -5 60 30 Typ. 140 5.5 Max. -10 -2 -1.5 320 Unit V V V uA V V Test Conditions IC=-10uA, IE=0 IC=-1mA. IB=0 IE=-10uA, IC=0 VCB=-140V, IE=0 IC=-30mA, IB=-3mA VCE=-5V, IC=-10mA VCE=-5V, IC=-10mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
MHz pF
*Pulse Test : Pulse Width 380us, Duty Cycle2%
Classification Of hFE1
Rank Range B 60-120 C 100-200 D 160-320
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 2/4
Saturation Voltage & Collector Current
1000
125 C
o
Saturation Voltage (mV)
75 C 100 125 C
o
o
hFE
25 C 100 75 C
o
o
25 C
o
hFE @ VCE=5V
VCE(sat) @ IC=10IB 10
10 1 10 100
0.1
1
10
100
Collector Current-IC (mA)
Collector Current-IC (mA)
ON Voltage & Collector Current
1000
Output Capacitance & Reverse-Blased Voltage
20
25 C
o
Output Capacttance-Cob (pF)
100
ON Voltage (mV)
15
75 C 125 C
o
o
10
5
VBE(ON) @ VCE=5V
100 0.1 1 10
0 0.1 1 10 100 1000
Collector Current-IC (mA)
Reverse-Biased-VCB (V)
Cutoff Frequency & Collector Current
1000 1000
Safe Operating Area
Cutoff Frequency (MHz)
100
Collector Current (mA)
100
10
10
1 0.1 1 10 100 1000
1 1 10 100 1000
Collector Current-IC (mA)
Forward Biased Voltage (V)
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 3/4
Power Derating
1000 900
Power Dissipation-PD (mW)
800 700 600 500 400 300 200 100 0 0 20 40 60 80 100
o
120
140
160
Ambient Temperature-Ta ( C)
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Date Code
Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 4/4
2
Marking:
H SB 1109S Rank Control Code
3
C
Style: Pin 1.Emitter 2.Collector 3.Base
D
H I E F
G
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109S
HSMC Product Specification

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